MOLECULAR BEAM EPITAXIAL APPARATUS, AND METHOD FOR MANUFACTURING CUBIC MONOCRYSTAL THIN FILM OF GROUP-III NITRIDE BY USING MOLECULAR BEAM EPITAXIAL APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a molecular beam epitaxial apparatus which can be downsized and efficiently realize epitaxial growth of a desired monocrystal thin film on a substrate, and to provide a method for manufacturing a monocrystal thin film of group-III nitride such as gallium nitride by using the molecular beam epitaxial growth apparatus capable of monocrystal thin film of group-III nitride such as gallium nitride inexpensively and highly pewcisely. SOLUTION: In the molecular beam epitaxial growth device having a high frequency discharge excitation atom cell, the high frequency discharge excitation cell has a magnetic field providing means with variable magnetic flux density to apply the magnetic field from a discharge chamber to the excitation atom excited in the discharge chamber. COPYRIGHT: (C)2006,JPO&NCIPI