| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition which has solved all the problems including insufficient selectivity of copper and a tantalum compound, excessive polishing of a copper film in interconnection trenches and holes or lack of smoothness on the surface of the copper film with an increase in selectivity with respect to copper, etc. when polishing a semiconductor device having the copper film and the tuatalum compound. <P>SOLUTION: A copolycondensed substance of PMMA having the average grain diameter of 40 nm and divinylbenzene, glycine, benzotriazole, ammonium sulfate, and hydrogen peroxide are mixed into ion exchange water filtered by a cartridge filter with 0.5μm capacity, so that the concentrations of the individual substances may become predetermined values. Then, the mixture is stirred by a high-speed homogenizer to disperse the mixed substances evenly into the water to form the polishing composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
