Separating a carbon doped silicon containing dielectric layer by low temperature gas phase separation of a surface comprises reacting silicon organic compound with hydrogen peroxide to separate a dielectric layer on surface

摘要

Separating a carbon doped silicon containing dielectric layer by low temperature gas phase separation of a surface comprises reacting a silicon organic compound with hydrogen peroxide to separate a dielectric layer on the surface, where the silicon organic compound exhibits at least one Si-O-Si bond. An independent claim is also included for a premetal dielectric (PMD)-semiconductor structure comprising: (a) semiconductor layer, which exhibits a distance between one another on a surface of a layer; and (b) dielectric layer, which exhibits at least a space filled without a cavity.