| 摘要 |
A method for producing a junction region ( 2, 5, 6, 7 ) between a trench ( 3 ) and a semiconductor zone ( 2 ) surrounding the trench ( 3 ) in a trench semiconductor device ( 1 ) has the following steps: application of an oxidation barrier layer ( 15 ) to an upper part (O) of the inner walls of the trench ( 3 ), and production of a first oxide layer ( 7 ) on a lower part (U) of the inner walls, said lower part not being covered by the oxidation barrier layer ( 15 ), by means of thermal oxidation of the uncovered (U) part of the inner walls.
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