发明名称 SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING EQUIPMENT, COMPUTER PROGRAM AND PROGRAM RECORDING MEDIUM
摘要 <p>A cleaning process using a cleaning liquid nozzle and a rinse process using a side rinse nozzle are performed to a wafer, and then a drying process is performed. In the drying process, the wafer is rotated, pure water starts to be supplied to a center point of the wafer from the pure water nozzle, and substantially at the same time, nitrogen gas starts to jet from a gas nozzle, at the wafer center part, to a point at a suitable distance from the wafer center. Then, while permitting the pure water nozzle to scan the wafer toward the wafer circumference, the gas nozzle is permitted to scan the wafer toward the wafer circumference in an area inner than the pure water nozzle position, after passing the wafer center.</p>
申请公布号 WO2005104200(A1) 申请公布日期 2005.11.03
申请号 WO2005JP07450 申请日期 2005.04.19
申请人 TOKYO ELECTRON LIMITED;OHNO, HIROKI;SEKIGUCHI, KENJI 发明人 OHNO, HIROKI;SEKIGUCHI, KENJI
分类号 B08B3/02;B08B5/02;G02F1/13;G02F1/1333;H01L21/00;H01L21/304;(IPC1-7):H01L21/304;G02F1/133 主分类号 B08B3/02
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