Method of growing nitride single crystal on silicon substrate, nitride semiconductor light emitting device using the same, method of manufacturing the same

摘要

A method of growing a nitride single crystal layer, and a method of manufacturing a light emitting device using the method are disclosed. The method of growing a nitride single crystal layer comprises the steps of preparing a silicon substrate having an upper surface of a crystal plane ( 111 ), forming a buffer layer having the formula of Si_xGe_1-x, (where 0