发明名称 |
METHOD OF PRODUCING P-DOPED SILICON SINGLE CRYSTAL AND P-DOPED N-TYPE SILICON SINGLE CRYSTAL WAFE |
摘要 |
<p>The present invention is a method of producing a P(phosphorus)-doped silicon single crystal by Czochralski method, wherein, at least, a growth of the single crystal is performed so that an Al (aluminum) concentration is 2 x 1012 atoms/cc or more. Thereby, there can be provided a method of easily and inexpensively producing a P(phosphorus)-doped silicon single crystal of defect-free region having an excellent capability of electrical characteristics to be high breakdown voltage, which contains neither, for example, V region, OSF region, nor large dislocation cluster (LSEPD, LFPD) region.</p> |
申请公布号 |
EP1591566(A1) |
申请公布日期 |
2005.11.02 |
申请号 |
EP20030768274 |
申请日期 |
2003.12.25 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
SAKURADA, MASAHIRO,;FUSEGAWA, IZUMI, |
分类号 |
C30B29/06;C30B15/00;C30B15/04;C30B15/20;(IPC1-7):C30B29/06 |
主分类号 |
C30B29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|