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发明名称
半导体装置之制造方法以及半导体元件之位置决定方法
摘要
本发明之半导体装置之制造方法具有:在基材上设置设有对位标记之半导体元件的步骤;以覆盖该半导体元件表面之方式,形成表面设有金属膜之绝缘膜的步骤;以及去除该绝缘膜及金属膜的一部份,使对位标记露出的步骤。藉由检测所露出之对位标记,掌握基材上之半导体元件的电极位置。
申请公布号
TW200535944
申请公布日期
2005.11.01
申请号
TW094106195
申请日期
2005.03.02
申请人
三洋电机股份有限公司
发明人
臼井良辅;井上恭典
分类号
H01L21/02;H01L23/544;H01L21/66
主分类号
H01L21/02
代理机构
代理人
洪武雄;陈昭诚
主权项
地址
日本
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