发明名称 |
Semiconductor device and method of manufacturing the same including forming metal silicide gate lines and source lines |
摘要 |
A semiconductor device comprises a plurality of gate lines composed of line shapes to function as gate electrodes in a plurality of transistors and separated from a substrate by a gate insulating layer, each having an upper metal silicide layer; and a plurality of source/drain regions formed on the substrate between said gate lines solely by carrying out impurity implantation processes.
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申请公布号 |
US6960500(B2) |
申请公布日期 |
2005.11.01 |
申请号 |
US20040777233 |
申请日期 |
2004.02.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN YOU-CHEOL;PARK KYU-CHARN;LEE WON-HONG;CHOI JUNG-DAL |
分类号 |
H01L21/28;H01L21/00;H01L21/336;H01L21/4763;H01L21/82;H01L21/8238;H01L21/8247;H01L27/108;H01L27/115;H01L29/04;H01L29/788;H01L29/792;(IPC1-7):H01L21/336;H01L21/823;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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