发明名称 THIN-FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE, CAD PROGRAM AND TRANSFER METHOD FOR THIN-FILM TRANSISTOR SUBSTRATE
摘要 A thin-film transistor substrate includes a pixel region where gate electrode lines are arranged on an insulating substrate sandwiching semiconductor layer patterns and a gate insulator with the insulating substrate, wherein shapes of the semiconductor patterns and the gate electrode lines are set so that a value of K obtained by the following equation is smaller than a first set value when the thin-film transistor substrate is mounted on a metal table: <?in-line-formulae description="In-line Formulae" end="lead"?>K=(L/Ce)x{Ca/(Ca+Cb)}xS <?in-line-formulae description="In-line Formulae" end="tail"?> where Ca represents a capacitor between each of the semiconductor layer patterns and the metal table, Cb represents a capacitor between each of the semiconductor layer patterns and the gate electrode lines, Ce represents a capacitor between each of the gate electrode lines and the metal table, L represents a length of each of the gate electrode line, and S represents a substrate surface area that one of the gate electrode lines are in charge of per unit length.
申请公布号 SG115846(A1) 申请公布日期 2005.10.28
申请号 SG20050002732 申请日期 2005.03.24
申请人 TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY CO., LTD. 发明人 TETSUYA KAWAMURA;KATSUHIKO INADA
分类号 H01L21/77;H01L27/12;H01L29/04 主分类号 H01L21/77
代理机构 代理人
主权项
地址
您可能感兴趣的专利