发明名称 |
THIN-FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE, CAD PROGRAM AND TRANSFER METHOD FOR THIN-FILM TRANSISTOR SUBSTRATE |
摘要 |
A thin-film transistor substrate includes a pixel region where gate electrode lines are arranged on an insulating substrate sandwiching semiconductor layer patterns and a gate insulator with the insulating substrate, wherein shapes of the semiconductor patterns and the gate electrode lines are set so that a value of K obtained by the following equation is smaller than a first set value when the thin-film transistor substrate is mounted on a metal table: <?in-line-formulae description="In-line Formulae" end="lead"?>K=(L/Ce)x{Ca/(Ca+Cb)}xS <?in-line-formulae description="In-line Formulae" end="tail"?> where Ca represents a capacitor between each of the semiconductor layer patterns and the metal table, Cb represents a capacitor between each of the semiconductor layer patterns and the gate electrode lines, Ce represents a capacitor between each of the gate electrode lines and the metal table, L represents a length of each of the gate electrode line, and S represents a substrate surface area that one of the gate electrode lines are in charge of per unit length. |
申请公布号 |
SG115846(A1) |
申请公布日期 |
2005.10.28 |
申请号 |
SG20050002732 |
申请日期 |
2005.03.24 |
申请人 |
TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY CO., LTD. |
发明人 |
TETSUYA KAWAMURA;KATSUHIKO INADA |
分类号 |
H01L21/77;H01L27/12;H01L29/04 |
主分类号 |
H01L21/77 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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