| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a storage device in which operation speed of a writing operation and a reading operation of data by storage elements provided in a storage area is increased. <P>SOLUTION: In the storage device having a plurality of varying resistance storage elements, a plurality of pairs of bit lines and word lines are connected to each varying resistor storage element and the bit lines and the word lines are connected to input/output control ports different by every pair, respectively. The word lines are connected to a gate of a reading control transistor provided at halfway part of connection wiring for connecting the bit lines and the varying resistor storage elements constituting the pair. In addition, a plurality of word lines for performing energization for changing resistance states of the varying resistance storage device are provided and the word lines are connected to different input/output ports, respectively in the storage device having the plurality of varying resistance storage elements. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
