| 摘要 |
PROBLEM TO BE SOLVED: To improve manufacturing yield of a TFT array substrate by improving anti-static electricity characteristic of semiconductor wiring in the TFT array substrate. SOLUTION: The TFT array substrate is provided with: many gate wires 11L formed of the first metal layer; many source wires 15L formed of the second metal layer and allocated crossing the gate wires 11L; a TFT 105 including a TFT semiconductor 14T formed of a semiconductor layer; semiconductor wire 14L formed of the semiconductor layer, allocated under the source wires 15L and is extended along the source wires 15L; and a semiconductor coupling part 14J formed of the semiconductor layer to couple these semiconductor wires 14L. This semiconductor coupling part 14J is formed as a series of semiconductor patterns together with the semiconductor wire 14L to be coupled. COPYRIGHT: (C)2006,JPO&NCIPI |
