MANUFACTURING METHOD AND MANUFACTURING DEVICE FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a rust prevention technique of metal wiring formed by a chemical mechanical polishing (CMP) method.

SOLUTION: The manufacturing method of the semiconductor integrated circuit device has a process for forming a metal layer formed of Cu (or Cu-basis alloy or the like) on the surface of a wafer, and thereafter forming metal wiring by performing flattening treatment for the metal layer by the chemical mechanical polishing (CMP) method; a process for forming a hydrophobic protective film in the surface of the metal wiring, by performing rust prevention treatment for the surface of the wafer which is subjected to flattening treatment; a process for removing oxidant which is a residual element of polishing slurry well from the surface of the wafer which is subjected to flattening treatment, and recognizing that it is removed well; and a process for performing post-cleaning for the surface of the wafer held in wet state. Consequently, the metal wiring formed by using the CMP method can be prevented from rusting.

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