| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that maintains a mechanical strength and enables full miniaturization and a method for manufacturing the device. SOLUTION: A semiconductor light emitting device LE1 comprises a layer structure LS and a glass substrate 1 optically transparent to outgoing beams. The layer structure LS comprises the laminated p-type contact layer 3, p-type first DBR layer 4, p-type first clad layer 5, active layer 6, n-type second clad layer 7 and n-type second DBR layer 8. A first electrode 21 is placed at one side of the layer structure LS, and a second electrode 31 at the other side of the same layer structure LS. A film 10 is also formed at one side of the above layer structure LS so as to cover the first electrode 21. This film 10 is composed of oxide silicon and the opposite side 10a of the layer structure LS is flat. The glass substrate 1 is bonded to the side 10a of the film 10. COPYRIGHT: (C)2006,JPO&NCIPI
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