| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-system semiconductor light emitting element using an MQW active layer consisting of a ternary InGaN which can be prevented from an increase in leakage current, is capable of high output power operation, and has a long-time reliability. <P>SOLUTION: The semiconductor light emitting element comprises the clad layer (110) of a first conductivity type which is formed of an In<SB>1-x-y</SB>Ga<SB>x</SB>Al<SB>y</SB>N (0≤x, y≤1)-based material, a quantum well active layer (115) consisting of a barrier layer formed of an In<SB>1-x-y</SB>Ga<SB>x</SB>Al<SB>y</SB>N (0≤x, y≤1)-based material, and a well layer formed of an In<SB>1-x</SB>Ga<SB>x</SB>N (0≤x≤1)-based material; and the clad layer (120) of a second conductivity type which is formed of an In<SB>1-x-y</SB>Ga<SB>x</SB>Al<SB>y</SB>N (0≤x, y≤1)-based material. The mole fractions of the constituent components of each layer are so selected as to lie in a range of (x+1.2y)=1±0.1 in order to suppress phase separation as much as possible. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
