| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a contact hole normally by preventing slitting when an oxide film etc., is deposited in an inversely tapered recess of a semiconductor device. <P>SOLUTION: A method for manufacturing a semiconductor device includes a stage of forming out of the film on the substrate 1 the recess 31 whose side wall is inversely tapered, a stage of depositing a 1st insulating film 15 and further a 2nd insulating film 16 on the substrate 1 having the recess 31, and a stage of forming a through hole 18 penetrating the 2nd and 1st insulating film in a region of the recess 31. The stage of depositing the 2nd insulating film 16 comprises a step of depositing the 2nd insulating film 16 while etching the 1st insulating film 15 deposited on an upper corner of the recess 31 and/or the 2nd insulating film 16 being deposited in 1st sputter etching mode, and a step of depositing the 2nd insulating film 16 while etching the 2nd insulating film 16 in 2nd sputter etching mode slower in etching speed than the 1st etching mode. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
