| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a class III-V nitride semiconductor having a good crystallinity on a ZnO substrate to thereby improve the dynamic characteristics and the reliability of a semiconductor device. <P>SOLUTION: An InN layer 2 for forming a channel layer is formed on the (000-1) plane (oxygen plane) of a semi-insulating ZnO substrate 1 andnitrogen atoms are substituted for oxygen atoms constituting the surface (oxygen plane) of the ZnO substrate 1 over the entire surface, i.e., the surface of the ZnO substrate 1 is nitrified to reform the surface into a nitrified (reformed) surface 8. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2005303250(A) |
申请公布日期 |
2005.10.27 |
| 申请号 |
JP20040220613 |
申请日期 |
2004.07.28 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OUCHI AKIRA |
| 分类号 |
H01L21/331;H01L21/203;H01L21/336;H01L21/338;H01L29/732;H01L29/78;H01L29/786;H01L29/812;H01L31/04;H01L33/06;H01L33/28;H01L33/32;H01S5/323 |
主分类号 |
H01L21/331 |
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