| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an element separation film of semiconductor elements which removes an FSG film produced at etching of a first oxide film by an etching process using oxygen to prevent fluorine from diffusing, thereby avoiding the characteristics deterioration of the elements. SOLUTION: The method comprises a step of etching a semiconductor substrate to form trenches at a specified depth, a step of forming a first oxide film on the upside of the entire structure after forming a side wall oxide film in the trenches by an oxidizing process, a step of etching the entire surface of the first oxide film with impurities residing on the upside of the first oxide film, a step of etching to remove the impurities, and a step of etching the entire surface to form an element separation film after forming a second oxide film on the upside of the entire structure. COPYRIGHT: (C)2006,JPO&NCIPI
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