| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device, having a structure in which low power consumption and high integration of the memory device and high-speed operation of the memory device can be achieved at the same time. SOLUTION: The magnetic memory device has a memory cell comprising a TMR element 10, in which magnetization fixed layers 4 to 7, a tunnel barrier layer 3, and a magnetization free layer 2 are laminated, and to which the write operation is conducted using a bit line 11 and a write word line 12. The bit line 11 (a first wiring line) is formed via an interlayer insulating film 54 (a first insulating layer), in which the TMR element 10 is embedded, while the write word line 12 (a second wiring line) is arranged opposite via an interlayer insulating film 50 (a second insulating layer). In the peripheral circuit section, the bit line 11 is connected to a connection wiring line 65 (a third wiring line) formed in an upper part which is separated from the interlayer insulating film 54, in order to avoid increase of the parasitic capacitance associated with the connecting wiring line 65, by the shortening of the distance between the bit line 11 and the write word line 12. COPYRIGHT: (C)2006,JPO&NCIPI
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