| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a power device which is a lateral-type FET device of its current flowing in parallel with the surface of its substrate and can increase further its flow-able current, in comparison with conventional ones while maintaining its high off time breakdown voltage. SOLUTION: Either one of source regions and drain regions is so set to rhombus-like regions 9, arranged longitudinally and latitudinally in the form of an M×N matrix above a substrate as to set the others of the source regions and the drain regions to prickle-pillar-like regions 8 surrounding the rhombus-like regions and coupled to each other above the substrate. Gate regions are so set into a rhombus-like shapes 7 surrounding the rhombus-like regions as to connect the adjacent gate regions with each other. The electrodes of the rhombus-like regions 9 are integrated with each other by wedge-like wirings, having collecting electrodes present at one-side end. Also, the electrodes of the prickle-pillar-like regions 8 are integrated with each other by wedge-like wirings, having collecting electrodes present at the other-side end. COPYRIGHT: (C)2006,JPO&NCIPI
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