| 摘要 |
PROBLEM TO BE SOLVED: To provide high-purity vanadium pentoxide (V<SB>2</SB>O<SB>5</SB>) which, for the purpose of preventing the emission of a radiation (αradiation) from an electronic material formed on a micro-thin circuit by sputtering a material such as an Ni-7 wt.% V alloy, is reduced in the U and Th contents in vanadium pentoxide (V<SB>2</SB>O<SB>5</SB>) as a raw material for the material, to provide a method for producing the same, and to thereby solve the problem of alpha radiation which adversely affects a slight electronic charge in e.g., an electronic circuit. SOLUTION: The method for producing the high-purity V<SB>2</SB>O<SB>5</SB>comprises the step of dissolving the starting V<SB>2</SB>O<SB>5</SB>in an acid, the step of performing solvent extraction after filtration, and the step of crystallization. COPYRIGHT: (C)2006,JPO&NCIPI
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