发明名称 Solid-state image sensing element and its design support method, and image sensing device
摘要 A solid-state image sensing element has a photoelectric conversion element which converts incoming light into an electrical signal in accordance with an amount of the light, a microlens which is arranged on an incident surface, a light guide which is arranged between the photoelectric conversion element and the microlens, and an insulating interlayer which is arranged around the light guide. The solid-state image sensing element located at a distance (H) satisfies: <maths id="MATH-US-00001" num="1"> <MATH OVERFLOW="SCROLL"> <MROW> <MFRAC> <MROW> <MI>H</MI> <MO>.</MO> <MI>D</MI> </MROW> <MROW> <MI>L</MI> <MO>.</MO> <MI>P</MI> </MROW> </MFRAC> <MO><</MO> <MROW> <MROW> <MI>a</MI> <MO>.</MO> <MFRAC> <MSUB> <MI>N</MI> <MI>H</MI> </MSUB> <MSUB> <MI>N</MI> <MI>L</MI> </MSUB> </MFRAC> </MROW> <MO>⁢</MO> <MSTYLE> <MTEXT> </MTEXT> </MSTYLE> <MO>⁢</MO> <MI>for</MI> <MO>⁢</MO> <MSTYLE> <MTEXT> </MTEXT> </MSTYLE> <MO>⁢</MO> <MN>0</MN> </MROW> <MO><</MO> <MI>a</MI> <MO><</MO> <MN>1</MN> </MROW> </MATH> </MATHS> where L is the distance from an exit pupil of an image sensing optical system of an image sensing device, which mounts an image sensor formed by two-dimensionally arranging a plurality of the solid-state image sensing elements, H is the distance from a center of the image sensor to a position of the solid-state image sensing element on the image sensor, D is the height from the photoelectric conversion element to an apex of the microlens, P is the spacing between the plurality of solid-state image sensing elements, N<SUB>H </SUB>is the refractive index of the light guide, and N<SUB>L </SUB>is the refractive index of the insulating interlayer.
申请公布号 US2005236553(A1) 申请公布日期 2005.10.27
申请号 US20050099447 申请日期 2005.04.06
申请人 CANON KABUSHIKI KAISHA 发明人 NOTO GORO;SUDA YASUO;NAGANO AKIHIKO
分类号 G02B3/00;G02B6/00;H01L21/82;H01L27/00;H01L27/146;H01L31/0216;H01L31/0232;(IPC1-7):H01L27/00 主分类号 G02B3/00
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