MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device suppressing the generation of stress due to a difference in the coefficient of thermal expansion between a semiconductor substrate and an insulating region, and permitting manufacture with a good yield. SOLUTION: A semiconductor substrate 1 is provided with: a first etching process for forming first trenches 104 and 105; a first deposition process for embedding the first trenches 104 and 105 with an insulating film 108; a second etching process for forming a second trench 110; a second deposition process for depositing the insulating film at such a film thickness that burying the second trench 110 is not finished; and a third deposition process for embedding the second trench with a field plate. COPYRIGHT: (C)2006,JPO&NCIPI