| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device comprising an NMOSFET and a PMOSFET that have satisfactory current characteristics, and a method of manufacturing the same. SOLUTION: A gate electrode 11 comprising a nickel silicide film 13 is formed in an NMOS region on a silicon substrate 1. Moreover, a gate electrode 10 comprising a polycrystalline silicon film 12 is formed in a PMOS region. The nickel silicide film 13 is a material that is subjected to compressive stress from the silicon substrate 1, while the polycrystalline silicon film 12 is a material that is subjected to tensile stress from the silicon substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI
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