| 摘要 |
FIELD: computer vision engineering; photodetectors, thermal imagers, infrared radiometers, and various sensors of computerized control devices. ^ SUBSTANCE: novelty in proposed device is that resistive photosensors are made of heteroepitaxial layers of different forbidden gap. Circuit set up of compensating charge capacitor connected to its potential recovery switch is connected to each integrating capacitor and through series-connected compensation addressing switch and feedback switch, to circuit transferring charge portion from charge compensating capacitor to integrating capacitor. Connected to each amplifier integrating capacitor is comparator whose output is connected to gate electrode of feedback switch and to complementing input of counter-register each of whose bits is connected to array of memory locations controlled by circuit affording exchange of addresses between counters and memory, data write and read buses of data on their transfer from counter to memory and vice versa. Memory locations are connected to counter-register bits. Device has memory readout addressing circuit and multiplexed readout buses for transferring digital data to digital outputs. ^ EFFECT: enhanced sensitivity and dynamic range. ^ 17 cl, 2 dwg |
