| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a thin film pattern having a minute size can be formed more accurately. SOLUTION: Since a soluble layer 2 which continuously covers the circumference of a two-layer resist pattern 5 and the whole body of a first thin film 17Z in an area other than the area covered by the two-layer resist pattern 5 is formed, the mold damage of the resist pattern 5 can be suppressed at the time of performing dry etching and the depositing amount of redeposits 9 can also be reduced. Consequently, an isolated first thin film pattern 17 having a minute size and demarcated by an outline 7 can be formed more accurately. In addition, since the two-layer resist pattern 5 covered by the soluble layer 2 is removed by using a solvent which can dissolve both the two-layer resist pattern 5 and soluble layer 2 after the first thin film pattern 17 is formed, the separation of the thin film pattern 17 and two-layer resist pattern 5 from each other can be performed without trouble. COPYRIGHT: (C)2006,JPO&NCIPI |
