| 摘要 |
In the solid-state image sensor including 4-Tr-pixels, a source follower transistor SF-Tr, a rest transistor RST and a select transistor Select are made common between pixels P<SUB>n</SUB>, P<SUB>n+1 </SUB>adjacent in the column direction, and a transfer transistor TG 1 and a transfer transistor TG 2 are formed in region which respectively positioned on the same side with respect to the photodiode PD 1 and the photodiode PD 2 , and the source follower transistor SF-Tr, the reset transistor RST and the select transistor Select made common are formed in regions positioned on the side in the row direction with respect to the photodiode PD 1 and the photodiode PD 2.
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