| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for cleaning the surface of a target in a physical deposition apparatus, without using a dummy wafer and wasting the target. SOLUTION: This cleaning method includes irradiating the surface of the target 2 with inert ions 4 having 6 times or smaller energy than the sublimation energy of a substance composing the target 2 in a period of forming no film, to clean the surface of the target 2. COPYRIGHT: (C)2006,JPO&NCIPI
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