| 摘要 |
A semiconductor photonic device and associated method are disclosed. The device includes a substrate and a buffer structure on the substrate. The buffer structure is formed of a discontinuous layer of aluminum gallium nitride and a gallium nitride layer on the aluminum gallium nitride layer having a thickness that functionally minimizes the number of defects propagated through it. At least two doped Group III nitride layers are on the buffer structure, with the layers being of opposite conductivity type from one another for providing electrons and holes that combine to generate an emission from the device when current is applied to the device.
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