发明名称 |
Strained silicon CMOS on hybrid crystal orientations |
摘要 |
Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.
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申请公布号 |
US2005236687(A1) |
申请公布日期 |
2005.10.27 |
申请号 |
US20040830347 |
申请日期 |
2004.04.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN K.;DORIS BRUCE B.;GUARINI KATHRYN W.;IEONG MEIKEI;NARASIMHA SHREESH;REZNICEK ALEXANDER;RIM KERN;SADANA DEVENDRA K.;SHI LEATHEN;SLEIGHT JEFFREY W.;YANG MIN |
分类号 |
H01L27/08;H01L21/02;H01L21/20;H01L21/336;H01L21/762;H01L21/8238;H01L21/84;H01L27/092;H01L27/12;H01L29/04;H01L29/76;H01L29/78;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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