发明名称 |
METHOD AND APPARATUS FOR IN-SITU FILM STACK PROCESSING |
摘要 |
Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer, and etching a trench in the silicon layer without removing the substrate from the processing chamber. The invention is particularly useful for thin film transistor fabrication for flat panel displays. |
申请公布号 |
WO2005101100(A2) |
申请公布日期 |
2005.10.27 |
申请号 |
WO2005US11319 |
申请日期 |
2005.04.01 |
申请人 |
APPLIED MATERIALS, INC.;MERRY, WALTER R.;SHANG, QUANYUAN;WHITE, JOHN M. |
发明人 |
MERRY, WALTER R.;SHANG, QUANYUAN;WHITE, JOHN M. |
分类号 |
B44C1/22;C23F1/00;G02F;H01J37/32;H01L21/302 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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