发明名称 Single crystal cutting method
摘要 The present invention provides a method for slicing a single crystal, wherein the single crystal is sliced by irradiating a portion to be sliced with an ultra short pulse laser beam while supplying a gas containing gaseous molecules or radicals that react with atoms constituting the single crystal to become stable gaseous molecules in the vicinity of the portion under slicing. Thus, there is provided a method for slicing a single crystal by using a laser processing, in which a single crystal is processed while obtaining a good sliced surface and markedly reducing a slicing loss.
申请公布号 US6958094(B2) 申请公布日期 2005.10.25
申请号 US20030332433 申请日期 2003.01.08
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 OHMI TADAHIRO;SUGAWA SHIGETOSHI;SHINOHARA TOSHIKUNI;ITO TATSUO;KANAYA KOICHI
分类号 B23K26/00;B23K26/06;B23K26/12;B23K26/40;B28D1/22;H01L21/304;(IPC1-7):C30B25/12;C30B25/14 主分类号 B23K26/00
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