发明名称 |
Memory cell strings |
摘要 |
A data storage device comprising a first memory cell string that includes at least a first magnetic random access memory (MRAM) cell coupled to a second MRAM cell and a circuit coupled to a node between the first MRAM cell and the second MRAM cell is provided. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and in response to a write sense current being applied across the first MRAM cell.
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申请公布号 |
US6958933(B2) |
申请公布日期 |
2005.10.25 |
申请号 |
US20040784514 |
申请日期 |
2004.02.23 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
SMITH KENNETH K.;CHAMPION CORBIN L.;WYATT STEWART R.;PERNER FREDERICK A. |
分类号 |
G11C11/15;(IPC1-7):G11C11/14 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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