| 发明名称 |
Low dielectric constant film material, film and semiconductor device using such material |
| 摘要 |
A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.
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| 申请公布号 |
US6958525(B2) |
申请公布日期 |
2005.10.25 |
| 申请号 |
US20030448092 |
申请日期 |
2003.05.30 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
NAKATA YOSHIHIRO;FUKUYAMA SHUN-ICHI;SUZUKI KATSUMI;YANO EI;OWADA TAMOTSU;SUGIURA IWAO |
| 分类号 |
B32B7/02;B32B27/00;C08K5/13;C08L83/04;C08L83/16;C09D183/04;C09D183/16;H01L21/312;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/58;H01L23/48 |
主分类号 |
B32B7/02 |
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