发明名称 METHOD FOR MANUFACTURING COPPER DIFFUSION BARRIER
摘要 <p>A copper metallization structure includes a dielectric pattern formed on a surface of a substrate. Sequentially formed on the dielectric pattern are a first Ru layer and an oxide film. The copper metallization structure further includes a second Ru layer formed on the oxide film and a Cu layer formed on the second Ru layer.</p>
申请公布号 KR100523658(B1) 申请公布日期 2005.10.24
申请号 KR20020086358 申请日期 2002.12.30
申请人 发明人
分类号 H01L21/28;H01L23/532;(IPC1-7):H01L21/28 主分类号 H01L21/28
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