Ferroelectric capacitor having an oxide electrode template and a method of manufacture therefor

摘要

The present invention provides a ferroelectric capacitor, a method for manufacture therefor, and a ferroelectric random access memory (FeRAM) device. The ferroelectric capacitor ( 100 ), among other elements, may include a first electrode layer ( 162 ) located over a substrate ( 110 ), wherein the first electrode layer ( 162 ) includes iridium, and an oxide electrode template ( 164 ) located over the first electrode layer ( 162 ). The ferroelectric capacitor ( 100 ) may further include a ferroelectric dielectric layer ( 165 ) located over the oxide electrode template ( 164 ), and a second electrode layer ( 170 ) located over the ferroelectric dielectric layer ( 165 ).