发明名称 |
Resist material and pattern formation method using the same |
摘要 |
After forming a resist film including titanium oxide on a substrate, pattern exposure is performed by selectively irradiating the resist film with light of a wavelength of 400 nm or less or an electron beam. After the pattern exposure, the resist film is developed, so as to form a resist pattern made of the resist film.
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申请公布号 |
US2005233259(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050071163 |
申请日期 |
2005.03.04 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ENDO MASAYUKI;SASAGO MASARU |
分类号 |
G03F7/004;G03F7/00;G03F7/039;G03F7/20;G03F7/26;H01L21/027;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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