| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a bonding wire for semiconductor elements wherein the rectilinear advance quality, the elongation percentage, and the tensile strength of the bonding wire are excellent, and its leaning faultiness can be suppressed. <P>SOLUTION: In the wire-diameter contracting and wire drawing works of a bonding wire, the area degression factors of the dies of the respective works are set to 5-25%, and the bonding wire is subjected to the wire-diameter contracting and wire drawing works under the condition of the difference between the maximum and minimum values of the area degression factors being not larger than 12%. Further, a mean area degression factor, an annealing speed in a final continuous anneal, and a furnace length satisfy the relation of the annealing speed (m/min)≤ the furnace length (cm)/(the mean area degression factor (%)/5)<SP>2</SP>. Hereupon, it is desirable to add to the bonding wire Be of 2-15 mass ppm and rare earth elements of 10-50 mass ppm in total of them. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
