发明名称 |
Chip-type sensor against ESD and stress damages and contamination interference |
摘要 |
A chip-type sensor against ESD and stress damages and contamination interference includes a substrate structure and a protection layer covering over the substrate structure. The protection layer includes, from bottom to top, a first layer for providing a first stress against the substrate structure, a second layer for providing a second stress against the substrate structure, and a third layer for providing a third stress against the substrate structure. The first stress and the third stress belong to one of a tensile stress and a compressive stress, and the second stress belongs to the other of the tensile stress and the compressive stress.
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申请公布号 |
US2005231213(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20040825313 |
申请日期 |
2004.04.16 |
申请人 |
CHOU BRUCE C S;CHENG WALLACE Y W;FAN CHEN-CHIH |
发明人 |
CHOU BRUCE C.S.;CHENG WALLACE Y.W.;FAN CHEN-CHIH |
分类号 |
G01R27/26;G06K9/00;(IPC1-7):G01R27/26 |
主分类号 |
G01R27/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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