发明名称 Chip-type sensor against ESD and stress damages and contamination interference
摘要 A chip-type sensor against ESD and stress damages and contamination interference includes a substrate structure and a protection layer covering over the substrate structure. The protection layer includes, from bottom to top, a first layer for providing a first stress against the substrate structure, a second layer for providing a second stress against the substrate structure, and a third layer for providing a third stress against the substrate structure. The first stress and the third stress belong to one of a tensile stress and a compressive stress, and the second stress belongs to the other of the tensile stress and the compressive stress.
申请公布号 US2005231213(A1) 申请公布日期 2005.10.20
申请号 US20040825313 申请日期 2004.04.16
申请人 CHOU BRUCE C S;CHENG WALLACE Y W;FAN CHEN-CHIH 发明人 CHOU BRUCE C.S.;CHENG WALLACE Y.W.;FAN CHEN-CHIH
分类号 G01R27/26;G06K9/00;(IPC1-7):G01R27/26 主分类号 G01R27/26
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