METHOD FOR PATTERN FORMING USING MASK

摘要

PROBLEM TO BE SOLVED: To precisely pattern a film and to suppress occurrence of the damage of a resist in a method for forming a mask including the forming process of a pattern by lift off. SOLUTION: The method for pattern forming using a mask comprises processes of: forming multilayer films 5a to 5c on an dielectric non-magnetic layer 4; forming an organic film 6 on the multilayer films 5a to 5c, a process of forming a resist film 7 on the organic film 6; exposing and developing the resist film 7 to form an opening part in a prescribed area; and removing an organic film 6 under the opening part to form the pattern of the organic film 6 and making the edge of the pattern of the organic film 6 enter inside from the edge of the pattern of the resist film 7. The resist film 7 consists of a bridge style chemical amplification negative resist, and the organic film 6 consists of positive type photosensitive resin. After the opening part is formed at the resist film 7, the resist film 7 and the organic film 6 are irradiated with UV to expose the organic film 6 and to harden the resist film 7. COPYRIGHT: (C)2006,JPO&NCIPI