| 摘要 |
PROBLEM TO BE SOLVED: To obtain the diffused electric field and potential rise of the back gate of a multi-finger type NMOS transistor which turns on a parasitic NPN transistor by uniformly impressing a pulse generated with respect to a circuit from a static electricity pulse impressed upon a pad upon the back gate. SOLUTION: A protective element is constituted to surround the multi-finger type NMOS transistor serving as a circuit for driving the electrostatic breakage protective element of a semiconductor integrated circuit constituted on a p-type semiconductor substrate, and having a plurality of gate electrodes with a diffusion layer having conductivity opposite to that of the semiconductor device. The pulse generated with respect to a circuit by utilizing the static electricity pulse is impressed upon the surrounded area. COPYRIGHT: (C)2006,JPO&NCIPI
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