| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a sold-state imaging element capable of suppressing a dark current and a defect of pixel. <P>SOLUTION: A plurality of photoelectric conversion element 4 are formed in a semiconductor substrate 1, and circuits 5 for reading out a signal charge from the plurality of photoelectric conversion element 4 are respectively formed on the semiconductor substrate 1. The solid-state imaging element 10 to which a light is irradiated from the opposite side of the circuits 5 for reading out the signal charge from the plurality of photoelectric conversion element is formed, and a gettering region 15 is provided to an element separating regiuon 2 for eparating the adjacent photoelectric conversion element 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
