发明名称 THROUGH ELECTRODE STRUCTURE, SEMICONDUCTOR SUBSTRATE LAMINATION MODULE AND THROUGH ELECTRODE FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a through electrode structure, a semiconductor substrate lamination module and a through electrode forming method which are capable of preventing the reflection of an electric signal or the disturbance of waveform of the electric signal, capable of eliminating unnecessary radiation, and capable of miniaturizing and highly increasing the density of a semiconductor device. SOLUTION: The through electrode structure is provided with a semiconductor substrate 1 having a main surface 1a on which an element is to be mounted. A through hole 2 penetrating from the main surface 1a to a rear surface 1b is formed on the semiconductor substrate 1. A conductor 4 and a part of dielectric layers 7, 8 are entered into the through hole 2. A convex curved surface 2a is formed at one part of an opening at the main surface 1a side of the through hole 2, and a substantially right-angled part 2d is formed at the other part of the opening at the main surface 1a side of the through hole 2. Conductors 4, 5, 6 and dielectric layers 7, 8, 9 are formed on the semiconductor substrate 1 while the conductor 4 and one part of the dielectric layers 7, 8 are entered into the through hole 2. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005294534(A) 申请公布日期 2005.10.20
申请号 JP20040107552 申请日期 2004.03.31
申请人 SHARP CORP;ESASHI MASAKI 发明人 SUMIKAWA MASAHITO;ESASHI MASAKI
分类号 H01L23/52;H01L21/3205;H01L23/12;(IPC1-7):H01L21/320 主分类号 H01L23/52
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