发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.
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申请公布号 |
US2005230728(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050107890 |
申请日期 |
2005.04.18 |
申请人 |
NATORI KATSUAKI;YAMAZAKI SOICHI;YAMAKAWA KOJI;KANAYA HIROYUKI |
发明人 |
NATORI KATSUAKI;YAMAZAKI SOICHI;YAMAKAWA KOJI;KANAYA HIROYUKI |
分类号 |
H01L27/105;H01L21/02;H01L21/8246;H01L23/522;H01L27/115;H01L31/113;(IPC1-7):H01L31/113 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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