发明名称 |
Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer |
摘要 |
A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are disclosed. Single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along the axis of the seed crystal, using a single crystal ( 1 ) in which the < 110> crystal orientation ( 10 ) is inclined at a predetermined angle theta with respect to the axial direction ( 9 ) so that the edge direction ( 8 ) of the { 111 } crystal plane is inclined with respect to the axial direction ( 9 ). When single crystal silicon is grown while pulling up a seed crystal by the CZ method, a single crystal silicon ingot of a large diameter and a heavy weight can be pulled up by eliminating slip dislocations from the thick crystal.
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申请公布号 |
US2005229840(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20040512022 |
申请日期 |
2004.10.19 |
申请人 |
IIDA TETSUHIRO;SHIRAISHI YUTAKA;SUEWAKA RYOTA;TOMIOKA JUNSUKE |
发明人 |
IIDA TETSUHIRO;SHIRAISHI YUTAKA;SUEWAKA RYOTA;TOMIOKA JUNSUKE |
分类号 |
C30B15/00;C30B15/36;C30B29/06;(IPC1-7):C30B15/00;C30B21/06;C30B30/04 |
主分类号 |
C30B15/00 |
代理机构 |
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地址 |
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