发明名称 |
3D cross-point memory array with shared connections |
摘要 |
A 3D cross-point memory array is provided having current sensing devices connected the bit line for reading out the bit value. The 3D cross-point memory array may be configured as multiple resistive memory array layers. Electrodes, either bit lines or word lines, may be connected together between resistive memory array layers.
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申请公布号 |
US2005230724(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20040825830 |
申请日期 |
2004.04.16 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
HSU SHENG T. |
分类号 |
H01L27/10;G11C11/16;G11C13/02;H01L27/24;H01L31/113;H01L43/08;(IPC1-7):H01L31/113 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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