发明名称 3D cross-point memory array with shared connections
摘要 A 3D cross-point memory array is provided having current sensing devices connected the bit line for reading out the bit value. The 3D cross-point memory array may be configured as multiple resistive memory array layers. Electrodes, either bit lines or word lines, may be connected together between resistive memory array layers.
申请公布号 US2005230724(A1) 申请公布日期 2005.10.20
申请号 US20040825830 申请日期 2004.04.16
申请人 SHARP LABORATORIES OF AMERICA, INC. 发明人 HSU SHENG T.
分类号 H01L27/10;G11C11/16;G11C13/02;H01L27/24;H01L31/113;H01L43/08;(IPC1-7):H01L31/113 主分类号 H01L27/10
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