| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element with which effect of current detour by a current inhibition layer laid in a current diffusion layer can sufficiently be obtained. <P>SOLUTION: A light emitting layer 2 which consists of III-V group compound semiconductor, a current diffusion layer 3, and an electrode 4 for applying luminescence drive power voltage to the light emitting layer 2, are laminated in this order. A region where the electrode 4 is not formed on the main surface of the current diffusion layer 3 becomes a light take-out face PF. The current inhibition layer 5 whose conduction type differs from the current diffusion layer 3 and which detours a conduction route between the electrode 4 and the light emitting layer 2 is laid just below the electrode 4 in the current diffusion layer 3. Luminescent light flux from the light emitting layer 2 is taken out from the light take-out face PF through a region located outside the current inhibition layer 5 of the current diffusion layer 3. Dopant concentration of the current inhibition layer 5 is higher than a part where the current diffusion layer 3 is brought into contact with the current inhibition layer 5. A lattice constant difference between the current inhibition layer 5 and a ground region 35 is 4% or less. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
