| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of optimizing the threshold voltage of both an NMOSFET and a PMOSFET and securing a large inversion capacity at the same time, and to provide its manufacturing method. SOLUTION: An element isolation insulating film 2 is formed in the circumference of the element region of a silicon substrate 1. Moreover, an N-type diffusion layer region 6, a P-type diffusion layer region 7, a P-type extension region 18, an N-type extension region 19, a P-type source-drain region 23, an N-type source-drain region 24, and a nickel silicide film 25 are formed in the element region. A gate insulating film comprises a silicon oxide film 8 and a hafnium silicate nitride film 9. Moreover, the N-type gate electrode comprises a N-type silicon film 10a and a nickel silicide film 28. The P-type gate electrode comprises a nickel silicide film 28. On the sidewall of each gate electrode, the hafnium silicate nitride film 9 is not formed. COPYRIGHT: (C)2006,JPO&NCIPI
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