发明名称 |
Semiconductor integrated circuit and a burn-in method thereof |
摘要 |
A semiconductor integrated circuit includes a first circuit and a second circuit having a breakdown voltage higher than that of the first circuit. Operation voltages of the first and second circuits can be made equal to or different from each other. The second circuit has a level shift circuit for shifting the level of an output signal of the first circuit in accordance with an operation voltage of the second circuit, an external output buffer having an input that can receive, selectively, an output signal of the level shift circuit or an input signal that bypasses the level shift circuit. When the first and second circuits operate with a low voltage, bypass is selected. In high-voltage operation and burn-in, the level shift circuit is selected.
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申请公布号 |
US2005231262(A1) |
申请公布日期 |
2005.10.20 |
申请号 |
US20050153355 |
申请日期 |
2005.06.16 |
申请人 |
NORTHERN JAPAN SEMICONDUCTOR TECHNOLOGIES, INC. |
发明人 |
TAHARA SHIGEMITSU;KATAGIRI DAISUKE;SHIMANUKI TAKESHI;OSHIBA MASASHI |
分类号 |
G01R31/30;G01R31/28;G01R31/316;H01L21/822;H01L27/04;H03K19/0175;H03K19/0185;H03L5/00;(IPC1-7):H03L5/00 |
主分类号 |
G01R31/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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