| 摘要 |
A flash memory cell transistor and a method for fabricating the same compensates a work function difference of a MOS and a nMOS with a triple gate insualting film by using electron density trapped in a pMOS gate insulating film. The flash memory cell transistor comprises a p-well region and a n-well region. The nMOS region comprises a nMOS channel ion-implantation region on the p-well region, a second gate oxide film on the nMOS channel ion-implantation region and a first n+ polysilicon gate electrode on the second gate oxide film. The pMOS region comprises a MOS channel ion-implantation region on the n-well region, a first gate oxide film, an insulating film having an electron trap and the second gate oxide film which are sequentially formed on the PMOS channel ion-implantation region, and a second n+ polysilicon gate electrode on the second gate oxide film.
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